Semiconductor device having fin structure and method of manufacturing the same

ABSTRACT

In a semiconductor device, a thin wall oxide film formed over sidewalls of an active region is formed, and a portion of the wall oxide film adjacent to a gate region is removed. A gate insulating film is formed where the portion of wall oxide film was removed to prevent a parasitic transistor from being generated by the wall oxide film.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional of U.S. application Ser. No.13/722,890 filed on Dec. 20, 2012, which claims priority to KoreanPatent Application No. 10-2012-0057431, filed on May 30, 2012, which areincorporated by reference in its their entirety.

BACKGROUND OF THE INVENTION

Embodiments of the present invention relate generally to a semiconductordevice with active regions having a fin structure, and more specificallyto a semiconductor device and a method of manufacturing the same not togenerate a parasitic transistor while reducing a thickness of a walloxide film formed at sidewalls of an active region.

As semiconductor devices have become more highly integrated, activeregions has been scaled down. As a result, the channel length oftransistors formed in the active region has been reduced.

If the channel length of transistors becomes smaller, the size of achannel region also becomes smaller, and short channel effects such asdrain induced barrier lowering (DIBL) occur.

Thus, various methods for maximizing the performance of devices whilereducing the size of elements formed over a substrate have beenresearched and developed. One of these various methods is a transistorhaving a fin structure.

The fin transistor is a transistor with a 3-dimensional channelstructure that includes an active region having a protruded channelregion, rather than a device isolation film, so that a gate may surroundboth side surfaces as well as the upper surface of the active region.Through this structure, the channel region is extended so that channelsmay be formed on three surfaces of the active region (upper surfaces andboth side surfaces), thereby improving driving current characteristics.

In such fin structure, the width of the fin is increased in order toincrease cell current. One of methods of increasing the width of the finis to reduce a thickness of an insulating film (wall oxide film) buriedin the lower portion of a device isolation film. That is, a space wherethe device isolation film is formed is determined by the width of theactive region and the thickness of the wall oxide film formed over theactive region. If the thickness of the wall oxide film is reduced whilethe space of the device isolation film is maintained, the width of theactive region can be increased corresponding to the reduction, therebyincreasing the width of the fin.

However, although the cell current is increased when the thickness ofthe wall oxide film is reduced, the wall oxide film protrudes above thedevice isolation film around the boundary of the device isolation filmand the gate, and the protruded wall oxide film serves as a gateinsulating film. In such a device, since the thickness of the wall oxidefilm is low, a parasitic transistor having a lower threshold voltagethan that of the fin transistor is generated around the boundary of thedevice isolation film and the gate. As a result, the overall thresholdvoltage of the cell becomes lower.

Accordingly, it is desirable to establish a new method for reducing thethickness of the wall oxide film without generating a parasitictransistor.

BRIEF SUMMARY OF THE INVENTION

Various embodiments of the present invention are directed to preventinga threshold voltage of a cell transistor from being lowered by aparasitic transistor by implanting a inert gas into a wall oxide film toremove the wall oxide film adjacent to a gate region and form a gateinsulating film at the removed location.

Various embodiments of the present invention are also directed toimproving an operating characteristic of the semiconductor device byselectively extending only a width of a gate adjacent to an activeregion in the gate region.

According to an embodiment of the present invention, a semiconductordevice comprises: an active region defined by a device isolation filmand the active region having a fin structure protruded in a gate region;a gate formed in the gate region over the fin structure; a wall oxidefilm located between the device isolation film and the active region;and a gate insulating film located between the gate and the activeregion, wherein a portion of the gate insulating film is provided belowan upper surface of the device isolation film.

The wall oxide film has a thickness thinner than that of the gateinsulating film.

An extended portion of the gate is disposed below an upper surface ofthe device isolation film and extends past a side surface of the finstructure.

The extended portion of the gate covers the portion of the gateinsulating film provided below the upper surface of the device isolationfilm.

According to another embodiment of the present invention, a method ofmanufacturing a semiconductor device comprises: etching a semiconductorsubstrate to form a trench for device isolation that defines an activeregion; forming a wall oxide film having a first thickness in the innersurface of the trench for device isolation; forming a device isolationfilm in the trench for device isolation; etching the active region andthe device isolation film to form a recess with a first depth over theactive region and a second depth greater than the first depth over thedevice isolation film; forming a moat by removing portions of the walloxide film adjacent to the active region exposed by the recess; forminga gate insulating film having a second thickness over the portion ofactive region exposed by the recess and the moat; and forming a gate inthe recess.

The method further comprises implanting a inert gas into the wall oxidefilm before forming the device isolation film.

The inert gas includes at least one selected from Ar and F.

The implanting-a-inert gas comprises performing a slant implantingprocess so that the inert gas may be implanted only into the wall oxidefilm formed at sidewalls of the trench for the device isolation.

The forming-a-moat comprises performing a cleaning process after formingthe recess to remove the wall oxide film protruded rather than thedevice isolation film around the boundary of the active region and thedevice isolation film, and the wall oxide film buried in the lowerportion of the device isolation film.

The forming-a-gate-insulating-film comprises forming an insulating filmin the active region so as to bury the moat.

The forming-a-moat comprises partially removing the device isolationfilm while removing the wall oxide film so as to extend partially awidth of the recess.

The forming-a-moat comprises removing the device isolation film adjacentto the active region exposed by the recess while removing the wall oxidefilm.

The forming-a-moat comprises: implanting an inert gas into the walloxide film and the device isolation film adjacent to the active regionexpose by the recess; and performing a cleaning process on the recess.

The forming-a-moat-comprises forming the width of the moat to be largerthan the thickness of the gate insulating film.

The forming-a-gate comprises forming a gate within the recess so as tobury the moat.

The implanting-a-inert gas comprises implanting the inert gas into theside surface as well as the bottom surface of the recess.

The inert gas includes at least one selected from Ar and F.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of thesubject matter of the present disclosure will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings, in which:

FIG. 1 illustrates a plan view of a semiconductor device according to anembodiment of the present invention;

FIG. 2 illustrates cross-sectional views of the embodiment of FIG. 1taken along A-A′ and B-B′;

FIGS. 3 to 8 illustrate cross-sectional views of a method forfabricating the embodiment of FIGS. 1 and 2;

FIG. 9 illustrates implantation of an inert gas according to anembodiment of the present invention; and

FIGS. 10 to 12 illustrate cross-sectional views of a method ofmanufacturing a semiconductor device according to another embodiment ofthe present invention.

DESCRIPTION OF EMBODIMENTS

Embodiments are described herein with reference to illustrations thatare schematic illustrations of embodiments of the present invention (andintermediate structures). As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, embodiments of the presentinvention should not be construed as being limited to the particularshapes of regions illustrated herein, but may include deviations inshapes that result, for example, from manufacturing. In the drawings,lengths and sizes of layers and regions may be exaggerated for clarity.Like reference numerals in the drawings denote like elements.

FIG. 1 illustrates a plan view of a semiconductor device according to anembodiment of the present invention, and FIG. 2 illustrates across-sectional view of the embodiment of FIG. 1, wherein (i) is across-sectional view taken along A-A′ and (ii) is a cross-sectional viewtaken along B-B′.

As shown in the figures, in a cell region of the semiconductor device, adevice isolation film 106 that defines an active region 104 is formedover a semiconductor substrate 100, and a gate 110 traverses the activeregion 104.

Referring to FIG. 1, which represents the cell region including a 6F²unit cell, the active region 104 intersects with the gate 110 at anoblique angle. However, embodiments of the present invention cab beapplied to a cell region including 8F² unit cells. Here, F refers to theminimum distance between fine patterns according to a design rule.

In the semiconductor device according to an embodiment of the presentinvention, the gate 110 may be a buried gate structure buried in theactive region 104, or a recess gate structure where a part of the gate110 is buried in the active region 104 and the other part of the gate110 protrudes above an upper surface of the active region 104. A channelregion having a fin structure is formed in the lower portion of the gate110.

In accordance with an embodiment of the present invention, a portion ofthe device isolation film 106 adjacent to the active region 104 in thegate region is etched to increase depth and the width of the gate in adirection transverse to the long axis of the active region. In addition,a moat is formed in the device isolation film 106 where the deviceisolation film meets active region 104, and the moat is filled with gatematerial. That is, the width and depth of the gate 110 in the deviceisolation film 106 are not uniform. A portion of the gate extending overthe active region 104 is wider and deeper than a portion of the gateextending over the isolation region 106, and the wider and deeper gateportion extends past the edge of the active region 104 to overlap with aportion of the isolation region 106. In FIG. 1, the thin rectanglesinside of the oval dotted lines represent expanded portions of the gate110. As shown in the dot oval of FIG. 1, the portion of the gateadjacent to the active region 104 is larger than portions of the gate110 extending through the remainder of the isolation region 106.

As a result, the width of the gate 110 is enlarged in the region where achannel is formed. The enlarged gate portion effectively extends anactive region of the semiconductor due to a channel being formed in theenlarged gate portion. The channel length is increased corresponding tothe enlargement of the gate, reducing the likelihood of short channeleffects.

As shown in FIG. 2, in an embodiment of the present invention, the walloxide film 102 is thinner than the gate insulating film 108. As shown inthe dashed circles in FIG. 2 (ii), at the boundary of the deviceisolation film 106 and the gate 110, the gate insulating film 108 andthe gate 110 are formed so that they may be buried in the deviceisolation film 106. That is, the thin wall oxide film 102 is not formedbetween the gate (110) and the active region (104). As a result, aparasitic transistor is not formed by the wall oxide film 102 having athin thickness. Moreover, an embodiment of the present invention canprovide the effect of extending the width of the fin by increasing thearea that surrounds the active region 104 by the gate 110.

The wall oxide film 102 includes an oxide material. A capping insulatingfilm 112 for insulating the gate 110 is formed over the gate 110.

FIGS. 3 to 8 illustrate cross-sectional views of a method forfabricating the structure of FIGS. 1 and 2.

Referring to FIG. 3, a pad oxide film (not shown) and a pad insulatingfilm (not shown) are formed over a semiconductor substrate 200. After aphotoresist film is formed over the pad insulating film, a photo etchprocess using shallow trench isolation (STI) is performed to form aphotoresist pattern (not shown) that defines an active region over a padnitride film.

The pad nitride film and the pad oxide film are sequentially etched withthe photoresist pattern to form a mask pattern (not shown). Thesemiconductor substrate 200 is etched using the mask pattern as an etchmask to form a trench for device isolation (not shown) that defines theactive region. Here, the etch process includes a dry etch process.

A wall oxide film 202 is formed on the surface of the semiconductorsubstrate 200 including the trench for device isolation. The wall oxidefilm 202 includes an oxide material, which can be formed by an oxidationprocess.

The wall oxide film 202 may be formed to be relatively thin in order toenlarge the width of the active region 204 without decreasing the spaceof the trench for device isolation, that is, to enlarge a width of a finto be formed in a subsequent process. If the space of the trench fordevice isolation is too narrow, it may be difficult to fully deposit adevice isolation film 206 in a subsequent process, which may result ingeneration of voids. When voids are present, undesirable effects such asa bridge between gates may be generated. Thus, in an embodiment, thewall oxide film 202 is formed to be thin, thereby enlarging the width ofthe active region 204 while maintaining the space of the deviceisolation trench.

After an insulating film for device isolation is formed in deviceisolation trench, the insulating film is etched and planarized to exposethe active region 204, thereby obtaining the device isolation film 206that defines the active region 204. The device isolation film 206 mayinclude a spin on dielectric (SOD) material or a high density plasma(HDP) oxide film with an excellent gap-fill characteristic. In otherembodiments, the device isolation film 206 may include a nitride film ora stacked structure including an oxide film and a nitride film.

Although it is not shown, after the device isolation film 206 is formed,ions may be implanted to a given depth into the upper portion of theactive region 204 to create source and drain regions.

Referring to FIG. 4, after a hard mask layer (not shown) is formed overthe active region 204 and the device isolation film 206, an etch processis performed with a mask that defines gate regions to etch the hard masklayer, thereby obtaining a hard mask pattern 208.

The active region 204 and the device isolation film 206 are etched usingthe hard mask pattern 208 as an etch mask to form recesses 210 thatdefine gate regions. The active region 204 and the device isolation film206 which are located in a recess 210 are additionally etched to form afin structure 212 where the active region 204 disposed in the bottom ofthe recess 210 is protruded, rather than the device isolation film 206.A part of the wall oxide film 202 over the sidewalls of the activeregion 204 etched from an upper portion of the active region 204. In anembodiment, the etch selectivity of the device isolation film 206 ishigher than that of the silicon of the wall oxide film 202 and theactive region 204 so that the device isolation film 206 is more deeplyetched, and a portion of the wall oxide film 202 remains above thedevice isolation film 206.

Referring to FIG. 5, a tilt implantation process is performed to implantan inert gas. In an embodiment, the inert gas is a gas that causesdamage to affected areas of the semiconductor so that affected areas aremore easily removed in a subsequent process. For example, a inert gassuch as fluorine (F) gas or argon (Ar) may be implanted into the walloxide film 202 and portions of the device isolation film 206 adjacent tothe active region 204 exposed by the recess 210. As a result, the inertgas is implanted into a portion of the device isolation film 206adjacent to the active region 204, a portion of the wall oxide film 202buried in the lower portion of the device isolation film 206, and intothe portion of the wall oxide film 202 protruded above the deviceisolation film 206 in the recess 210. That is, the inert gas is notimplanted uniformly into the all exposed surfaces of device isolationfilm 206 exposed by the recess 210. Rather, a high concentration of theinert gas is implanted around the boundary of the active region 204 andthe device isolation film 206 in the recess 210, and other exposedsurfaces are not exposed to a high concentration of the inert gas.

In an embodiment, as shown by the direction of arrows in FIG. 9, theinert gas may be implanted in the four way twist directions ({circlearound (2)} {circle around (3)}) as well as in the direction Y ({circlearound (1)}). As a result, the inert gas is implanted into side andbottom surfaces of the recess 210 around the boundary of the activeregion 204 and the device isolation film 206. In a subsequent cleaningprocess, when portions of the wall oxide film implanted with the inertgas are removed, the portion of the device isolation film 206 implantedwith the inert gas is also removed from to extend the width and thedepth of portions of the recess 210 near the boundary of the activeregion 204 and the device isolation film 206.

Although FIG. 5 only shows that the inert gas is implanted only aroundthe boundary of the active region 204 and the device isolation film 206,in an embodiment the inert gas may be implanted into all surfaces of thedevice isolation film 206 exposed by the recess 210. However, in such anembodiment, while the width of the recess 210 is extended, thepossibility of a short between adjacent gates may be higher during asubsequent gate forming process.

Referring to FIG. 6, a cleaning process is performed on the resultantstructure of FIG. 5 to remove portions of the wall oxide film 202 andthe device isolation film 206 that were implanted with the inert gas.That is, when a post cleaning process performed after the etch processfor forming the fin structure or a pre-cleaning process performed beforethe process for forming the gate insulating film in the active region204 protruded with the fin structure is performed, the wall oxide film202 and the device isolation film 206 implanted with the inert gas areselectively removed to form a moat 214. The moat 214 may have a heightranging from 0 to 300 Å. For example, in various embodiments, the moatmay be 50 Å, 100 Å, 200 Å, or 300 Å.

In an embodiment, the moat 214 may be a trench with a width directionorthogonal to the long axis of an active region and a length directionparallel to the long axis of the active region.

FIG. 7 illustrates a cross-sectional view taken along C-C′ in FIG. 1.The device isolation film region implanted with the inert gas by a tiltimplantation process as shown in FIG. 9 is etched during a cleaningprocess to form the moat 214 in the vertical direction. As a result, thewidth of the recess 210 is extended. In an embodiment, the width of themoat is formed to be larger than the thickness of a gate insulating filmformed in a subsequent process. That is, the width of the moat is formedto be large enough to form a portion of a gate as well as the gateinsulating film within the moat.

Referring to FIG. 8, a gate insulating film 216 is formed in a portionof the active region 204 exposed by the recess 210 and the moat 214. Inthe recess 210, the gate insulating film 216 is extended to a lowerheight than the upper surface of the device isolation film 206. In anembodiment, the gate insulating film 216 is formed over inner surfacesincluding sidewalls and the lower surface of recesses 210 to a depthbelow an upper surface of device isolation film 206 in the moat 214. Theresulting structure may include a contiguous layer of wall oxide film202 and gate insulating film 216 formed over surfaces of the substrate200 and fin structures 212. In an embodiment, a thickness of gateinsulating film 216 is greater than a thickness of wall oxide film 202.

In an embodiment, a conductive material for a gate may be formed in therecess 210, and an etch-back process is performed so that the conductivematerial remains only in the lower portion of the recess 210, therebyobtaining a buried gate 218. That is, the gate 218 is formed in a regionwithin the moat 214, thereby effectively extending the fin width of thetransistor.

After an insulating film is formed over the buried gate 218 to bury therecess 210, the insulating film is planarized to form a cappinginsulating film 220.

FIGS. 10 to 12 illustrate cross-sectional views of a method ofmanufacturing a semiconductor device according to another embodiment ofthe present invention.

In the above-described embodiment of the present invention, the inertgas is implanted after the recess 210 defining the fin structure 212 isformed. However, in the embodiment shown in FIGS. 10 to 12, the inertgas is implanted into the wall oxide film 202 before the deviceisolation film 206 is formed.

In an embodiment, before the insulating film for device isolation isformed in a trench for device isolation after the wall oxide film 202 isformed as shown in FIG. 3, the inert gas is implanted into the walloxide film 202 as shown in FIG. 10. The implantation method of the inertgas includes a tilt implantation. That is, by the tilt implantationprocess performed in the Y direction as shown in (a) of FIG. 10, theinert gas is implanted into portions of the wall oxide film 202 formedover long-axis sidewalls of active region 204. In another embodiment, asshown in (b) of FIG. 10, the inert gas may be implanted in a directionperpendicular to the lower surface of semiconductor substrate 200without any tilt.

After the device isolation film 206 is formed as shown in FIG. 3, therecess 210 is formed, as shown in FIG. 4, to obtain the fin structure212 in the gate region. A part of the wall oxide film 202 may remainprotruded above the device isolation film 206.

Thereafter, the cleaning process is performed, which may be the samecleaning process discussed above with respect to FIG. 6. However, thestructure resulting from the cleaning process conducted on asemiconductor device made with implantation of FIG. 10 has differentcharacteristics from the structure of FIG. 6, as shown in FIG. 11.

Since the inert gas is implanted into the wall oxide film 202, duringthe cleaning process as shown in FIG. 11, portions of the wall oxidefilm 202 located on upper surfaces of fin structure 212 and below theupper surface of device isolation film 206 are etched to form a moat214′.

As shown in FIG. 12, gate insulating film 216 is formed over portions ofthe active region 204 exposed by the recess 210 and the moat 214′. Themoat 214′ is filled by the gate insulating film 216. After the gate 218is formed in the lower portion of the recess 210, capping insulatingfilm 220 is formed over the resulting structure. Although gate 218 maybe a buried gate, in another embodiment the gate may be a recessed gate.

In the embodiment shown in FIGS. 10 to 12, the inert gas is notimplanted after the recess 210 is formed. Instead, the inert gas isimplanted into the wall oxide film 202 before the device isolation film206 is formed. As a result, a process for extending the width of therecess 210 may not be performed around the boundary of the active region204 and the device isolation film 206. However, in the embodiment shownin FIGS. 10 to 12, after the recess 210 is formed, the gas implantationprocess is performed to implant the inert gas into the device isolationfilm 206 disposed in the side surface of the recess 210, and a cleaningprocess is performed to partially remove the device isolation film 206adjacent to the active region 204, so that the width of the recess 210may be partially extended as shown in (ii) of FIG. 6.

Accordingly, in embodiments of the present invention, a portion of thewall oxide film adjacent to the gate region is removed, and the gateinsulating film is formed at the removed place to prevent a parasitictransistor forming through the thin wall oxide film, thereby preventinga threshold voltage of a cell transistor from being lowered.

Also, in embodiments of the present invention, only the width ofportions of the gate adjacent to the active region in the gate region isselectively extended to prevent a short phenomenon between adjacentgates while increasing a fin width, thereby improving operatingcharacteristics of the semiconductor device.

The above embodiments of the present invention are illustrative and notlimitative. Various alternatives and equivalents are possible. Theinvention is not limited by the embodiment described herein. Nor is theinvention limited to any specific type of semiconductor device. Otheradditions, subtractions, or modifications are obvious in view of thepresent disclosure and are intended to fall within the scope of theappended claims.

What is claimed is:
 1. A semiconductor device, comprising: an activeregion defined by a device isolation film, the active region having afin structure that protrudes into a gate region; a gate formed in thegate region over the fin structure; a wall oxide film located betweenthe device isolation film and the active region; and a gate insulatingfilm located between the gate and the active region, wherein a portionof the gate insulating film is provided below an upper surface of thedevice isolation film, wherein the gate insulating film has a thicknessgreater than a thickness of the wall oxide film, and wherein the deviceisolation film is in contact with the wall oxide film.
 2. Thesemiconductor device according to claim 1, wherein an extended portionof the gate is disposed below the upper surface of the device isolationfilm and extends along a side surface of the fin structure.
 3. Thesemiconductor device according to claim 2, wherein the extended portionof the gate covers the portion of the gate insulating film providedbelow the upper surface of the device isolation film.
 4. Thesemiconductor device according to claim 1, wherein the gate is disposeddirectly on the device isolation film.
 5. The semiconductor deviceaccording to claim 2, wherein the extended portion of the gate has aheight less than 20 Å.
 6. A semiconductor device, comprising: an activeregion defined by a device isolation film, the active region having afin structure that protrudes into a gate region; a gate formed in thegate region over the fin structure; a wall oxide film located betweenthe device isolation film and the active region; and a gate insulatingfilm located between the gate and the active region, wherein a firstportion of the gate insulating film is disposed below an upper surfaceof the device isolation film, and a second portion of the gateinsulating film is disposed above the upper surface of the deviceisolation film, and wherein the first portion of the gate insulatingfilm has a thickness substantially the same as a thickness of the walloxide film, and the second portion has a thickness greater than thethickness of the wall oxide film.
 7. The semiconductor device accordingto claim 6, wherein the first portion of the gate insulating film isburied in the device isolation film.
 8. The semiconductor deviceaccording to claim 6, wherein the device isolation film is disposeddirectly on the wall oxide film, and wherein the gate is disposeddirectly on the device isolation film.